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Samsung has announced that it has started mass production of 3D V-NAND TLC flash memory of the 9th generation with a capacity of 1 Tbit. The new chips offer increased density and energy efficiency compared to 3th generation 8D V-NAND TLC memory chips.
The manufacturer did not specify the number of layers used in the 3th generation 9D V-NAND TLC memory with a capacity of 1 Tbit, as well as the technical process used for their production. However, Samsung noted that thanks to the industry's compact cell size, the bit density of the 3th generation 9D V-NAND TLC chips has been improved by about 50% compared to the previous generation 3D V-NAND TLC memory. The manufacturer also reported that the new memory chips use anti-interference technology, the cells have an increased service life, and the elimination of fictitious holes in the current-conducting channels made it possible to significantly reduce the planar area of the memory cells.
The 3th generation 9D V-NAND TLC flash memory is equipped with a new generation Toggle 5.1 interface, which increased the data input/output speed by 33% to 3,2 Gbps per pin. Along with this, the company reduced energy consumption by 10% compared to the previous generation. In the second half of the year, Samsung plans to start production of ninth-generation 3D V-NAND with a capacity of 1 Tbit with QLC cells.
